The Structure and Properties of Amorphous Indium Oxide
A series of In2O3 thin films, ranging from X-ray diffraction amorphous to highly crystalline, were grown on amorphous silica substrates using pulsed laser deposition by varying the film growth temperature. The amorphous-tocrystalline transition and the structure of amorphous In2O3 were investigated by grazing angle X-ray diffraction (GIXRD), Hall transport measurement, high resolution transmission electron microscopy (HRTEM), electron diffraction, extended X-ray absorption fine structure (EXAFS), and ab initio molecular dynamics (MD) liquid-quench simulation. On the basis of excellent agreement between the EXAFS and MD results, a model of the amorphous oxide structure as a network of InOx polyhedra was constructed. Mechanisms for the transport properties observed in the crystalline, amorphous-to-crystalline, and amorphous deposition regions are presented, highlighting a unique structure-property relationship.
D. B. Buchholz et al., "The Structure and Properties of Amorphous Indium Oxide," Chemistry of Materials, vol. 26, no. 18, pp. 5401-5411, American Chemical Society (ACS), Jan 2014.
The definitive version is available at https://doi.org/10.1021/cm502689x
Center for High Performance Computing Research
Keywords and Phrases
Crystalline Materials; Deposition; Extended X Ray Absorption Fine Structure Spectroscopy; Film Growth; High Resolution Transmission Electron Microscopy; Indium; Molecular Dynamics; Pulsed Laser Deposition; X Ray Absorption; X Ray Diffraction; Ab Initio Molecular Dynamics; Amorphous Indium-Oxide; Amorphous Oxides; Extended X-Ray Absorption Fine Structures; Grazing Angle X-Ray Diffraction; Structure and Properties; Structure Property Relationships; Transport Measurements; Amorphous Films
International Standard Serial Number (ISSN)
Article - Journal
© 2014 American Chemical Society (ACS), All rights reserved.
01 Jan 2014