Abstract
During the past four years, researchers made significant advances in fabricating magnetic tunnel junctions with reproducible magnetic and magneto transport properties. Important developments include optimization of oxidation processes, discovery of new class of magnetic tunnel junctions, combination of spin dependent tunneling with the Coulomb blockade effect, and a better theoretical understanding of the I-V characteristics of magnetic tunnel junctions. These developments make them promising candidates for magnetic random-access memories. © Elsevier Science Ltd.
Recommended Citation
P. M. Levy and S. Zhang, "Spin Dependent Tunneling," Current Opinion in Solid State and Materials Science, vol. 4, no. 2, pp. 223 - 229, Elsevier, Jan 1999.
The definitive version is available at https://doi.org/10.1016/S1359-0286(99)00008-X
Department(s)
Physics
International Standard Serial Number (ISSN)
1359-0286
Document Type
Article - Journal
Document Version
Citation
File Type
text
Language(s)
English
Rights
© 2024 Elsevier, All rights reserved.
Publication Date
01 Jan 1999
Comments
National Science Foundation, Grant INT-9602192