Abstract
A room-temperature determination of the absolute structure factor for the forbidden (222) reflection in silicon has been conducted at the University of Missouri Research Reactor with 103-keV gamma rays. The measured structure factor of F(222)=1.456 is in excellent agreement with five of the earlier intensity measurements and is significantly different from any value determined using Pendellösung techniques. An increase in accuracy over previous intensity measurements by a factor of between 2 and 10 has been achieved and is made possible through the use of monoenergetic, short-wavelength gamma rays, which allow absolute measurements to be made in Laue geometry on relatively thick crystals (∼1 mm) without encountering extinction problems. © 1982 The American Physical Society.
Recommended Citation
R. W. Alkire et al., "Determination Of The Absolute Structure Factor For The Forbidden (222) Reflection In Silicon Using 0.12-γ Rays," Physical Review B, vol. 26, no. 6, pp. 3097 - 3104, American Physical Society, Jan 1982.
The definitive version is available at https://doi.org/10.1103/PhysRevB.26.3097
Department(s)
Physics
International Standard Serial Number (ISSN)
0163-1829
Document Type
Article - Journal
Document Version
Final Version
File Type
text
Language(s)
English
Rights
© 2023 American Physical Society, All rights reserved.
Publication Date
01 Jan 1982
