Nanosecond Optical Transmission Studies Of Laser Annealing In Ion-implanted Silicon-on-sapphire

Author

M. C. Lee
H. W. Lo
A. Aydinli
G. J. Trott
A. Compaan
Edward Boyd Hale, Missouri University of Science and TechnologyFollow

Abstract

Time-resolved optical transmission has been studied using 633 and 514 nm CW probes on ion-implantation-amorphized silicon-on-sapphire during annealing by a 10 nsec, ⊥ J/cm2 pulse at either 532 nm or 485 nm. As recrystallization sets in the transmitted signal at 514 nm rises by ⊥ 103 in ⊥ 60 nsec and provides a measure of regrowth velocity. Beyond 200 nsec the much slower transmission rise is used to provide an estimate of the Si cooling rate. The difference in transmission observed between initially crystalline and initially amorphous Si provide an estimate of the latent heat of recrystallization of the amorphous phase. © 1983.

Recommended Citation

M. C. Lee et al., "Nanosecond Optical Transmission Studies Of Laser Annealing In Ion-implanted Silicon-on-sapphire," Solid State Communications, vol. 46, no. 9, pp. 677 - 680, Elsevier, Jan 1983.

The definitive version is available at https://doi.org/10.1016/0038-1098(83)90505-7

Department(s)

Physics

Comments

Office of Naval Research, Grant None

International Standard Serial Number (ISSN)

0038-1098

Document Type

Article - Journal

Document Version

Citation

File Type

text

Language(s)

English

Rights

© 2023 Elsevier, All rights reserved.

Publication Date

01 Jan 1983