Abstract
Raman scattering is used to study the annealing behavior produced by 10 nsec, 565 nm dye laser pulses in high dose ion-implanted GaAs. Samples were prepared with Sn and Cd implantations of 2, 5, and 10 x 1015 cm2. The Raman spectra indicate that the threshold for epitaxial growth lies between 0.2 - 0.3 J cm2. Best carrier activation (∼ 2%), however, is achieved at ∼1.6 J cm2 for the Sn-implanted sample (n-type). For Cd implantation the electrical activation appears to be very high ({greater-than or approximate} 50%) for low pulse energies({less-than or approximate} 0.3 J cm2) but decreases for higher pulse energies. © 1985.
Recommended Citation
H. D. Yao et al., "Raman Studies Of Heavily Implanted, Dye-laser-annealed GaAs," Solid State Communications, vol. 56, no. 8, pp. 677 - 680, Elsevier, Jan 1985.
The definitive version is available at https://doi.org/10.1016/0038-1098(85)90777-X
Department(s)
Physics
International Standard Serial Number (ISSN)
0038-1098
Document Type
Article - Journal
Document Version
Citation
File Type
text
Language(s)
English
Rights
© 2023 Elsevier, All rights reserved.
Publication Date
01 Jan 1985
