Abstract
The radiative lifetime and quenching rates for the A 2∑ + state of GeF have been measured in the flame of GeH 4+F2 by pulsed laser induced fluorescence. In addition, the radiative lifetime of the ν′=0 level of the A 2∑ + state of SiF has been measured in the flame of SiH 4+F2. Quenching rates for He, N2, and SF 6 on GeF A 2∑ and He on SiF A 2∑ have also been determined. The average zero pressure lifetime of ν′=0, 1, and 2 levels of A 2∑ GeF is 990±100 nsec. The zero-pressure lifetime of the A 2∑ state of SiF is 205±20 nsec. The average quenching rates for He, N2, and SF6 on GeF A 2∑ are 1.6x105, 6.4x106, and 8x105 sec-1Torr-1, respectively. The quenching rate of He on A 2∑(ν′0) SiF is 6.5x104 sec-1 Torr-1. © 1978 American Institute of Physics.
Recommended Citation
R. A. Anderson et al., "Time Resolved Fluorescence Of The A ²∑+ State Of GeF," The Journal of Chemical Physics, vol. 68, no. 7, pp. 3286 - 3291, American Institute of Physics, Jan 1978.
The definitive version is available at https://doi.org/10.1063/1.436134
Department(s)
Physics
International Standard Serial Number (ISSN)
0021-9606
Document Type
Article - Journal
Document Version
Final Version
File Type
text
Language(s)
English
Rights
© 2023 American Institute of Physics, All rights reserved.
Publication Date
01 Jan 1978
