Abstract
The ion implantation of boron has been found to be an effective method for increasing the conductivity of strontium titanate. A highly conductive layer was formed by implantations at doses of 3.6x1016 to 1.0x1017 ions/cm2, using an accelerating voltage of 100 kV, corresponding to a boron range of about 300 nm. The conductivity of the implanted layer was found to be further enhanced by about four orders of magnitude after annealing at 225 °C. The surface resistivity attained was typically 1000 Ω/square at room temperature. The resistance increased with rising temperature between 77 and 500 K. All samples were found to be n type, as determined by Hall-effect and thermoelectric measurements. The measured Hall mobility range was from 100 cm2/V sec at 77 K, decreasing to 5 cm2/V sec at 300 K. The existence of several defect energy levels can be inferred from the electrical data.
Recommended Citation
C. M. Cooper et al., "Conductive Strontium Titanate Layers Produced By Boron-ion Implantation," Journal of Applied Physics, vol. 50, no. 4, pp. 2826 - 2831, American Institute of Physics, Dec 1979.
The definitive version is available at https://doi.org/10.1063/1.326195
Department(s)
Physics
International Standard Serial Number (ISSN)
0021-8979
Document Type
Article - Journal
Document Version
Final Version
File Type
text
Language(s)
English
Rights
© 2023 American Institute of Physics, All rights reserved.
Publication Date
01 Dec 1979
