Abstract
Ion implantation has a substantial effect on the heterogeneous nucleation of water and ice. An enhancement of water nucleation and a suppression of ice nucleation occurred for samples of silicon implanted with ions of various species and dosage. These effects were noticeable only for samples implanted with ion doses approaching or exceeding the critical dose necessary to produce amorphous silicon. The behavior of the water droplet and ice crystal growth can be related to the amount of ion produced damage to the substrate surface. The nature of the damage can be controlled by variation of the incident ion species, dose, and energy and thus offers a means of quantifying the surface damage while studying its relationship to heterogeneous nucleation. © 1980 American Chemical Society.
Recommended Citation
W. H. Stlnebaugh et al., "Water And Ice Nucleation Sites From Ion Implantation Of Silicon," The Journal of Physical Chemistry, vol. 84, no. 12, pp. 1469 - 1473, American Chemical Society, Jan 1980.
The definitive version is available at https://doi.org/10.1021/j100449a008
Department(s)
Physics
International Standard Serial Number (ISSN)
0022-3654
Document Type
Article - Journal
Document Version
Citation
File Type
text
Language(s)
English
Rights
© 2023 American Chemical Society, All rights reserved.
Publication Date
01 Jan 1980
