Abstract
The gain and total count rate of electron channel multipliers depend strongly on applied magnetic fields. We report experimental results for Channeltrons operated in magnetic fields of up to 300 G, and find that the applied voltage must be increased to about 4000 V to maintain a sufficiently high gain. Slightly higher count rates are observed if the magnetic field is parallel to the plane of the Channeltron, as compared to perpendicular to that plane. © 1972 The American Institute of Physics.
Recommended Citation
Y. B. Hahn et al., "Channeltron Gain In Magnetic Fields," Review of Scientific Instruments, vol. 43, no. 4, pp. 695 - 696, American Institute of Physics, Dec 1972.
The definitive version is available at https://doi.org/10.1063/1.1685730
Department(s)
Physics
International Standard Serial Number (ISSN)
0034-6748
Document Type
Article - Journal
Document Version
Final Version
File Type
text
Language(s)
English
Rights
© 2023 American Institute of Physics, All rights reserved.
Publication Date
01 Dec 1972