Abstract
A new paramagnetic center with g = 2.0029 is observed, in both n- and p-type silicon after they are heavily implanted (higher than 1017 ions/cm2) with 150-keV argon ions. © 1973 American Institute of Physics.
Recommended Citation
K. C. Chu et al., "Electron Spin Resonance In Argon-ion-implanted Silicon," Journal of Applied Physics, vol. 44, no. 9, p. 4243, American Institute of Physics, Dec 1973.
The definitive version is available at https://doi.org/10.1063/1.1662935
Department(s)
Physics
International Standard Serial Number (ISSN)
0021-8979
Document Type
Article - Journal
Document Version
Final Version
File Type
text
Language(s)
English
Rights
© 2023 American Institute of Physics, All rights reserved.
Publication Date
01 Dec 1973
