Surface And Bulk Impurity Eigenvalues In The Shallow Donor Impurity Theory
The d±1 levels are numerically located for the shallow donor impurity when the impurity is at the semiconductor surface for both silicon and germanium. d0, d±2, and for high n the s, p0, and p±1 levels are found for the case of the impurity somewhere in the bulk material. Generalized energy equations, trial wave functions, effective Bohr radii, and some relative electric-dipole transition probabilities are given. © 1967.
R. J. Bell et al., "Surface And Bulk Impurity Eigenvalues In The Shallow Donor Impurity Theory," Surface Science, vol. 7, no. 3, pp. 293 - 301, Elsevier, Jan 1967.
The definitive version is available at https://doi.org/10.1016/0039-6028(67)90022-2
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01 Jan 1967