Surface And Bulk Impurity Eigenvalues In The Shallow Donor Impurity Theory

Author

Robert John Bell, Missouri University of Science and Technology
W. T. Bousman
G. M. Goldman
D. G. Rathbun

Abstract

The d±1 levels are numerically located for the shallow donor impurity when the impurity is at the semiconductor surface for both silicon and germanium. d0, d±2, and for high n the s, p0, and p±1 levels are found for the case of the impurity somewhere in the bulk material. Generalized energy equations, trial wave functions, effective Bohr radii, and some relative electric-dipole transition probabilities are given. © 1967.

Recommended Citation

R. J. Bell et al., "Surface And Bulk Impurity Eigenvalues In The Shallow Donor Impurity Theory," Surface Science, vol. 7, no. 3, pp. 293 - 301, Elsevier, Jan 1967.

The definitive version is available at https://doi.org/10.1016/0039-6028(67)90022-2

Department(s)

Physics

International Standard Serial Number (ISSN)

0039-6028

Document Type

Article - Journal

Document Version

Citation

File Type

text

Language(s)

English

Rights

© 2023 Elsevier, All rights reserved.

Publication Date

01 Jan 1967