Shallow Donor Surface Impurity Levels In Si And Ge
Abstract
A previously published variational method for calculating shallow surface impurity levels was extended to include arbitrary orientations of the effective mass ellipsoid relative to the surface. Numerical results appropriate to shallow donors on (100), (110), and (111) surfaces in Si and Ge are given. The results show that the energies are rather strongly dependent on the orientation of the mass ellipsoid. © 1971.
Recommended Citation
W. E. Tefft and K. R. Armstrong, "Shallow Donor Surface Impurity Levels In Si And Ge," Surface Science, vol. 24, no. 2, pp. 535 - 540, Elsevier, Jan 1971.
The definitive version is available at https://doi.org/10.1016/0039-6028(71)90279-2
Department(s)
Physics
International Standard Serial Number (ISSN)
0039-6028
Document Type
Article - Journal
Document Version
Citation
File Type
text
Language(s)
English
Rights
© 2023 Elsevier, All rights reserved.
Publication Date
01 Jan 1971
Comments
U.S. Air Force, Grant None