Moiré Modulation of Lattice Strains in PdTe2 Quantum Films
Abstract
We Report the Epitaxial Growth of PdTe2 Ultrathin Films on a Topological Insulator Bi2Se3. a Prominent Moiré Pattern Was Observed in Scanning Tunneling Microscope Measurements. the Moiré Periodicity Increases as Film Thickness Decreases, Indicating a Lattice Expansion of Epitaxial PdTe2 Thin Films at Lower Thicknesses. in Addition, Our Simulations based on a Multilayer Relaxation Technique Reveal Uniaxial Lattice Strains at the Edge of PdTe2 Domains, and Anisotropic Strain Distributions throughout the Moiré Supercell with a Net Change in Lattice Strain Up to ∼2.9%. Our Density Functional Theory Calculations Show that This Strain Effect Leads to a Narrowing of the Band Gap at Γ Point Near the Fermi Level. under a Strain of ∼2.8%, the Band Gap at Γ Closes Completely. Further Increasing the Lattice Strain Makes the Band Gap Reopen and the Order of Conduction Band and Valence Bands Inverted in Energy. the Experimental and Theoretical Results Shed Light on a Method for Constructing Quantum Grids of Topological Band Structure under the Modulation of Moiré Potentials.
Recommended Citation
J. Cook and D. Halbertal and Q. Lu and X. Zhang and C. Conner and G. Watson and M. Snyder and M. Pollard and Y. S. Hor and D. N. Basov and G. Bian, "Moiré Modulation of Lattice Strains in PdTe2 Quantum Films," 2D Materials, vol. 10, no. 3, article no. 035005, IOP Publishing, Jul 2023.
The definitive version is available at https://doi.org/10.1088/2053-1583/accc9c
Department(s)
Physics
Keywords and Phrases
heterostructure; moiré pattern; topological insulator; transition metal dichalcogenide
International Standard Serial Number (ISSN)
2053-1583
Document Type
Article - Journal
Document Version
Citation
File Type
text
Language(s)
English
Rights
© 2023 IOP Publishing, All rights reserved.
Publication Date
01 Jul 2023
Comments
National Science Foundation, Grant DMR 1255607