Abstract
The Reflectivity of N-Type InSb Has Been Measured in the Far Infrared. the Doping of the Samples Was Such that the Free-Carrier Plasma Frequency Was Near the LO Mode Frequency. the Results Suggest that Samples with a Sufficiently Thick Damage Layer Show Effects Due to Surface Plasmons. Use of a Simple Model Indicates that the Surface-Plasma Excitations Are Coupled to the Phonons. © 1971 the American Physical Society.
Recommended Citation
W. E. Anderson et al., "Surface Plasmons and the Reflectivity of N-Type InSb," Physical Review Letters, vol. 27, no. 16, pp. 1057 - 1060, American Physical Society, Jan 1971.
The definitive version is available at https://doi.org/10.1103/PhysRevLett.27.1057
Department(s)
Physics
International Standard Serial Number (ISSN)
0031-9007
Document Type
Article - Journal
Document Version
Final Version
File Type
text
Language(s)
English
Rights
© 2023 American Physical Society, All rights reserved.
Publication Date
01 Jan 1971
