Abstract
The Double Reflectivity Dips, Previously Observed by Fischer Et Al. and Anderson Et Al., Which Appeared in the Reflection Spectra of Grating Surfaces On, the Te‐doped Semiconductors GaAs and InSb Around Both the Plasmon and Phonon Frequencies Have Been Measured in More Detail. in the Plasmon Region, Several Possible Explanations of the Phenomenon Are Discussed, But the Favored Explanation Involves Surface Damage. a Simple Two‐region Reflectivity Equation Checked with a Rigorous Grating Theory is Proposed and is Shown to Fit the Data Well. Copyright © 1975 WILEY‐VCH Verlag GmbH & Co. KGaA
Recommended Citation
L. F. Teng et al., "Double Reflection Dips from Grating Ruled Semiconductors," physica status solidi (b), vol. 68, no. 2, pp. 513 - 523, Wiley, Jan 1975.
The definitive version is available at https://doi.org/10.1002/pssb.2220680207
Department(s)
Physics
International Standard Serial Number (ISSN)
1521-3951; 0370-1972
Document Type
Article - Journal
Document Version
Citation
File Type
text
Language(s)
English
Rights
© 2023 Wiley, All rights reserved.
Publication Date
01 Jan 1975
