Experimental and theoretical evidence for hydrogen doping in polymer solution-processed indium gallium oxide
Abstract
The field-effect electron mobility of aqueous solution-processed indium gallium oxide (IGO) thin-film transistors (TFTs) is significantly enhanced by polyvinyl alcohol (PVA) addition to the precursor solution, a >70-fold increase to 7.9 cm2/Vs. To understand the origin of this remarkable phenomenon, microstructure, electronic structure, and charge transport of IGO:PVA film are investigated by a battery of experimental and theoretical techniques, including In K-edge and Ga K-edge extended X-ray absorption fine structure (EXAFS); resonant soft X-ray scattering (R-SoXS); ultraviolet photoelectron spectroscopy (UPS); Fourier transform-infrared (FT-IR) spectroscopy; time-of-flight secondary-ion mass spectrometry (ToF-SIMS); composition-/processing-dependent TFT properties; high-resolution solid-state 1H, 71Ga, and 115In NMR spectroscopy; and discrete Fourier transform (DFT) analysis with ab initio molecular dynamics (MD) liquid-quench simulations. The 71Ga{1H} rotational-echo double-resonance (REDOR) NMR and other data indicate that PVA achieves optimal H doping with a Ga···H distance of ∼3.4 Å and conversion from six-to four-coordinate Ga, which together suppress deep trap defect localization. This reduces metal-oxide polyhedral distortion, thereby increasing the electron mobility. Hydroxyl polymer doping thus offers a pathway for efficient H doping in green solvent-processed metal oxide films and the promise of high-performance, ultra-stable metal oxide semiconductor electronics with simple binary compositions.
Recommended Citation
W. Huang et al., "Experimental and theoretical evidence for hydrogen doping in polymer solution-processed indium gallium oxide," Proceedings of the National Academy of Sciences of the United States of America, vol. 117, no. 31, pp. 18231 - 18239, National Academy of Sciences, Aug 2020.
The definitive version is available at https://doi.org/10.1073/pnas.2007897117
Department(s)
Physics
Research Center/Lab(s)
Center for High Performance Computing Research
Keywords and Phrases
Hydrogen doping; Indium gallium oxide; Oxide semiconductor; Polymer incorporation; Transistor
International Standard Serial Number (ISSN)
0027-8424
Document Type
Article - Journal
Document Version
Citation
File Type
text
Language(s)
English
Rights
© 2020 National Academy of Sciences, All rights reserved.
Publication Date
04 Aug 2020
PubMed ID
32703807