An Increase in T_C under Hydrostatic Pressure in the Superconducting Doped Topological Insulator Nb₀.₂₅Bi₂Se₃

Author

M. P. Smylie
K. Willa
K. Ryan
H. Claus
W.-K. Kwok
Y. Qiu
Yew San Hor, Missouri University of Science and TechnologyFollow
U. Welp

Abstract

We report a positive hydrostatic pressure derivative of the superconducting transition temperature in the doped topological insulator Nb_0.25Bi₂Se₃ via dc SQUID magnetometry in pressures up to 0.6 GPa. This result is contrary to reports on the homologues Cu_xBi₂Se₃ and Sr_xBi₂Se₃ where smooth suppression of T_C is observed. This difference may be attributable to an electronic structure composed of multiple bands whereas the other materials in the superconducting doped Bi₂Se₃ family are believed to be single-band.

Recommended Citation

M. P. Smylie et al., "An Increase in T_C under Hydrostatic Pressure in the Superconducting Doped Topological Insulator Nb₀.₂₅Bi₂Se₃," Physica C: Superconductivity and its Applications, vol. 543, pp. 58 - 61, Elsevier B.V., Dec 2017.

The definitive version is available at https://doi.org/10.1016/j.physc.2017.10.010

Department(s)

Physics

Keywords and Phrases

Nematic Superconductors; Pressure-Enhanced Superconductivity; Superconducting Topological Insulators; Topological Superconductors

International Standard Serial Number (ISSN)

0921-4534

Document Type

Article - Journal

Document Version

Citation

File Type

text

Language(s)

English

Rights

© 2017 Elsevier B.V., All rights reserved.

Publication Date

01 Dec 2017