Electronic Structure and Light-Induced Conductivity of a Transparent Refractory Oxide

Author

Julia E. Medvedeva, Missouri University of Science and TechnologyFollow
Arthur J. Freeman
Mariana I. Bertoni
Thomas O. Mason

Abstract

Combined first-principles and experimental investigations reveal the underlying mechanism responsible for a drastic change of the conductivity (by 10 orders of magnitude) following hydrogen annealing and UV irradiation in a transparent oxide, 12CaO · 7Al₂O₃, found by Hayashi et al. [Nature (London) 419, 462 (2002).] The charge transport associated with photoexcitation of an electron from H^- occurs by electron hopping.We identify the atoms participating in the hops, determine the exact paths for the carrier migration, estimate the temperature behavior of the hopping transport, and predict a way to enhance the conductivity by specific doping.

Recommended Citation

J. E. Medvedeva et al., "Electronic Structure and Light-Induced Conductivity of a Transparent Refractory Oxide," Physical Review Letters, vol. 93, no. 1, pp. 016408-1 - 016408-4, American Physical Society (APS), Jul 2004.

The definitive version is available at https://doi.org/10.1103/PhysRevLett.93.016408

Department(s)

Physics

Keywords and Phrases

Annealing; Carbon Nanotubes; Charge Transfer; Crystallography; Doping (Additives); Electric Conductivity; Electronic Structure; Energy Gap; Hydrogen; Ion Implantation; Sintering; Ultraviolet Radiation; Band Gap; Electron Trapping; Hopping; Photoexcitation; Calcium Compounds

International Standard Serial Number (ISSN)

0031-9007

Document Type

Article - Journal

Document Version

Final Version

File Type

text

Language(s)

English

Rights

© 2004 American Physical Society (APS), All rights reserved.

Publication Date

01 Jul 2004