Thermal Management in Large Bi2212 Mesas Used for Terahertz Sources
We present a thermal analysis of a patterned mesa on a Bi 2Sr2CaCu2O8 (Bi2212) single crystal that is based on tunneling characteristics of the c-axis stack of ~800 intrinsic Josephson junctions in the mesa. Despite the large mesa volume (e.g., 40 x 300 x 1.2 μm3) and power dissipation that result in self-heating and backbending of the current-voltage curve (I-V), there are accessible bias conditions for which significant polarized THz-wave emission can be observed. We estimate the mesa temperature by equating the quasiparticle resistance, Rqp(T), to the ratio V/I over the entire I-V including the backbending region. These temperatures are used to predict the unpolarized black-body radiation reaching our bolometer and there is substantial agreement over the entire I-V. As such, backbending results from the particular R qp (T) for Bi2212, as first discussed by Fenton, rather than a significant suppression of the energy gap. This model also correctly predicts the observed disappearance of backbending above ~60 K.
C. Kurter and K. E. Gray and J. F. Zasadzinski and L. Ozyuzer and A. E. Koshelev and Q. Li and T. Yamamoto and K. Kadowaki and W. Kwok and M. Tachiki and U. Welp, "Thermal Management in Large Bi2212 Mesas Used for Terahertz Sources," IEEE Transactions on Applied Superconductivity, vol. 19, no. 3, pp. 428-431, Institute of Electrical and Electronics Engineers (IEEE), Jun 2009.
The definitive version is available at https://doi.org/10.1109/TASC.2009.2019235
Geosciences and Geological and Petroleum Engineering
Keywords and Phrases
A-thermal; Bi-2212; Bi2sr2CaCu2o8 (Bi2212) crystals; Bias conditions; Current voltage curve; Intrinsic Josephson junction; Intrinsic josephson junctions; Mesa structure; Patterned mesas; Power dissipation; Quasi particles; Self-heating; Terahertz emission; Terahertz sources; Thermal management; Tunneling characteristics; Wave emissions; Electric potential; Heating; Josephson junction devices; Joule heating; Single crystals; Thermoanalysis; Crystal structure
International Standard Serial Number (ISSN)
Article - Journal
© 2009 Institute of Electrical and Electronics Engineers (IEEE), All rights reserved.
01 Jun 2009