Abstract
A theoretical approach for studying charge-carrier and energy diffusion due to long-range hopping in substitutionally disordered solids is presented. Unlike some earlier theories, which invoke a pair approximation to treat back-transfer processes, the current theory makes use of the exact solution to an appropriate single-defect problemone in which long-range jumps into, out of, and between both the defect site and all other active sites in the lattice are explicitly included. From this exact solution a new long-range effective-medium theory is constructed to describe the configurationally averaged transport properties of the disordered system.
Recommended Citation
P. E. Parris, "Long-Range Hopping in Substitutionally Disordered Solids," Physical Review B (Condensed Matter), vol. 39, no. 13, pp. 9343 - 9352, American Physical Society (APS), May 1989.
The definitive version is available at https://doi.org/10.1103/PhysRevB.39.9343
Department(s)
Physics
International Standard Serial Number (ISSN)
0163-1829
Document Type
Article - Journal
Document Version
Final Version
File Type
text
Language(s)
English
Rights
© 1989 American Physical Society (APS), All rights reserved.
Publication Date
01 May 1989
