Resonant Dielectronic and Direct Excitation in Crystal Channels

Author

Sheldon Datz
Charles Randy Vane
Peter F. Dittner
J. P. Giese
J. C. Gomez Del Campo
N. L. Jones
Herbert F. Krause
Philip D. Miller
Michael Schulz, Missouri University of Science and TechnologyFollow
Harald Schone
Thomas M. Rosseel

Abstract

We have observed dielectronic and direct excitation of H-like S¹⁵⁺ and Ca¹⁹⁺ and He-like Ti²⁰⁺ ions in silicon channels caused by collision with weakly bound target electrons which behave as a free-electron gas. As in vacuo, relaxation of the doubly excited states can occur radiatively leading to ions of decreased charge, but in a crystal channel collisional effects can cause double ionization. The effects are seen in both the x-ray yields and charge-state fractions, and, in the case of Ti²⁰⁺, in charge-state x-ray coincidences.

Recommended Citation

S. Datz and C. R. Vane and P. F. Dittner and J. P. Giese and J. C. Gomez Del Campo and N. L. Jones and H. F. Krause and P. D. Miller and M. Schulz and H. Schone and T. M. Rosseel, "Resonant Dielectronic and Direct Excitation in Crystal Channels," Physical Review Letters, vol. 63, no. 7, pp. 742 - 745, American Physical Society (APS), Aug 1989.

The definitive version is available at https://doi.org/10.1103/PhysRevLett.63.742

Department(s)

Physics

International Standard Serial Number (ISSN)

0031-9007

Document Type

Article - Journal

Document Version

Final Version

File Type

text

Language(s)

English

Rights

© 1989 American Physical Society (APS), All rights reserved.

Publication Date

01 Aug 1989