Abstract

A method for producing a metal foil comprising depositing metal onto an oxidizable substrate to form a metal film on the substrate; oxidizing the substrate at an interface between the metal film and the substrate; and removing the metal film from the substrate to yield a metal foil. A method for forming a thin metal film comprising pre-polarizing a single-crystal Si substrate by application of a potential which is negative of a potential at which Si oxidizes, which pre-polarization occurs in the presence of metal ions to form metal growth nucleation sites on the substrate, followed by application of a potential at which both oxidation of Si and electrodeposition of the metal occur to grow the metal film and oxidize the Si to SiOx, which potential is more positive than the potential applied in the pre-polarization step.

Department(s)

Chemistry

Comments

Docket Number: 17MST019-UTL

Filing Date: 11/01/2018

Issue Date: 04/13/2021, FY21

References Cited

U.S. Patent Documents:

5,891,285 A * 4/1999 Nakayama…............C25D 1/003 156/150

2005/0048306 A1 * 3/2005 Suzuki…............C25D 1/04 428/548

2016/0343568 A1 * 11/2016 Dai...............H01L 27/1296

Foreign Patent Documents:

JP 51-050230 A * 1/1976

Prior Publication Data:

US 2019/0132957 A1 May 2, 2019

Patent Application Number

16/178,201

Patent Number

US 10,980,130 B2

Document Type

Patent

Document Version

Citation

File Type

text

Language(s)

English

Rights

© 2026 The Curators of the University of Missouri, All rights reserved

Additional Rights Information

Assignee: The Curators of the University of Missouri, Columbia, Missouri (US)

Publication Date

13 April, 2021

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