Presenter Information

Gregory J. Teets


Nuclear Engineering and Radiation Science

Research Advisor

Kumar, A. S. (Arvind S.)

Advisor's Department

Nuclear Engineering and Radiation Science


Silicon is an important element that has many applications ranging from semiconductors to solar cells. The quantity, diffusion, and bonding of hydrogen atoms in the silicon can play an important role in the electrical characteristics of single crystal and etched single crystal silicon. The hydrogen bonds to the impurities and to the dangling bonds in the silicon and reduces current leakage and improves performance [1-4]. Until now hydrogen bonding data has been extrapolated from related studies to determine hydrogen evolution temperatures from the silicon. Abrefah, Olander, et al. [1] studied deuterium evolution from silicon where the deuterium had been implanted at 1.7 - 9.2 atmospheres. Pankove and Lampert [2] estimated that H2 evolution began at 350 °C and ended at 550 °C. None of these papers studied hydrogen (H2) using modulated beam mass spectrometry to obtain exact information on how hydrogen release rates, temperature, and time are related. This paper will describe the use of modulated beam mass spectrometry techniques to determine thermodynamic properties of hydrogen in silicon.

Document Type


Presentation Date

29 Jan 1993