Signal Readout in A-Si:H Pixel Detectors
Abstract
A switch consisting of two a-Si:H p-i diodes was studied to readout signal from pixels for the imaging of X-ray or gamma ray distributions. A charge storage time of 20 ms and a readout time of 0.7 µs were achieved. For the detection of single ionizing particles, polysilicon thin-film transistor amplifiers can be integrated to amplify the small signals at the pixel level before readout. Prototype polysilicon TFT amplifiers were designed and fabricated. The measured gain-bandwidth product was ~300 MHz and the input equivalent noise charge was ~1000 electrons for a 1-µs shaping time.
Recommended Citation
G. Cho et al., "Signal Readout in A-Si:H Pixel Detectors," IEEE Transactions on Nuclear Science, Institute of Electrical and Electronics Engineers (IEEE), Jan 1993.
The definitive version is available at https://doi.org/10.1109/23.256573
Meeting Name
IEEE Nuclear Science Symposium and Medical Imaging Conference (NAA/MIC 92)
Department(s)
Nuclear Engineering and Radiation Science
International Standard Serial Number (ISSN)
0018-9499
Document Type
Article - Conference proceedings
Document Version
Citation
File Type
text
Language(s)
English
Rights
© 1993 Institute of Electrical and Electronics Engineers (IEEE), All rights reserved.
Publication Date
01 Jan 1993
