Monte Carlo Studies on the Amorphous Silicon Based Digital X-Ray Imagers
Abstract
Results of Monte Carlo simulations on amorphous silicon based x-ray imaging arrays are described. In order to investigate the characteristics of amorphous silicon x-ray imaging devices and to provide the optimum design parameters, Monte Carlo simulations were performed. Monte Carlo simulation codes for our purpose were developed and various combinations of x-ray peak voltages, aluminum filter thicknesses, CsI(Tl) thicknesses, and amorphous silicon photodiode pixel sizes were tested in connection with detection efficiency and spatial resolution of the amorphous silicon based x-ray imager. With usual CsI(Tl) thickness of 300 µm to approximately 500 µm, detection efficiency was in the range of 70% to approximately 95% and energy absorption efficiency was in the range of 40% to approximately 70% for 60 kVp to approximately 120 kVp x-rays. From the simulations it was found that amorphous silicon pixel size and CsI(Tl) thickness were the most important parameters which determine the resolution of the imager. By use of our simulation results we could provide proper combinations of CsI(Tl) thicknesses and pixels sizes for optimum sensitivity and resolution.
Recommended Citation
H. Lee et al., "Monte Carlo Studies on the Amorphous Silicon Based Digital X-Ray Imagers," IEEE Nuclear Science Symposium & Medical Imaging Conference, Institute of Electrical and Electronics Engineers (IEEE), Jan 1997.
The definitive version is available at https://doi.org/10.1109/NSSMIC.1997.670547
Meeting Name
Proceedings of the 1997 IEEE Nuclear Science Symposium
Department(s)
Nuclear Engineering and Radiation Science
Document Type
Article - Conference proceedings
Document Version
Citation
File Type
text
Language(s)
English
Rights
© 1997 Institute of Electrical and Electronics Engineers (IEEE), All rights reserved.
Publication Date
01 Jan 1997
