Abstract
A simplified model for the short-circuit current reduction caused by proton-induced radiation damage is described. The model accounts for the nonuniformity of defect production within heteroface GaAs shallow junction solar cells. The results from the model show agreement with the strong energy dependence observed in proton radiation damage experiments.
Recommended Citation
J. W. Wilson et al., "Proton Damage in GaAs Solar Cells," IEEE Transactions on Electron Devices, Institute of Electrical and Electronics Engineers (IEEE), Jan 1984.
The definitive version is available at https://doi.org/10.1109/T-ED.1984.21544
Department(s)
Mining Engineering
International Standard Serial Number (ISSN)
0018-9383
Document Type
Article - Journal
Document Version
Final Version
File Type
text
Language(s)
English
Rights
© 1984 Institute of Electrical and Electronics Engineers (IEEE), All rights reserved.
Publication Date
01 Jan 1984
