Abstract

As a van der Waals (vdW) layered semiconductor material, lead iodide (PbI2) possessing a direct bandgap with strong photoluminescence emission in visible range has gained wide attention in applications of photonic and optoelectronic devices. Here, up conversion photoluminescence (UPL) in exfoliated PbI2 flakes is demonstrated at room temperature and elevated temperatures. The linear power dependence of UPL emission with 532 nm excitation suggests the one-photon involved multiphonon-assisted UPL emission process, which is revealed by the temperature-dependent UPL emission measurement. Meanwhile, the nonlinear power dependence of UPL emission with 561 nm excitation indicates the transition of UPL emission mechanism from linear to nonlinear regime, and the temperature-dependent UPL emission study further shows that the up conversion is contributed by both the multiphonon-assisted UPL process and the two-photon absorption induced PL process. This study will provide an insight to the understanding of photon up conversion in vdW layered semiconductors and advancing applications in temperature-controlled photon up conversion, tunable photonics, photodetection and imaging.

Department(s)

Mechanical and Aerospace Engineering

Publication Status

Open Access

Comments

Defense Advanced Research Projects Agency, Grant W911NF2110353

Keywords and Phrases

Layered PbI 2; Upconversion photoluminescence

International Standard Serial Number (ISSN)

2045-2322

Document Type

Article - Journal

Document Version

Final Version

File Type

text

Language(s)

English

Rights

© 2024 The Authors, All rights reserved.

Creative Commons Licensing

Creative Commons License
This work is licensed under a Creative Commons Attribution 4.0 License.

Publication Date

01 Dec 2024

PubMed ID

39506018

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