Fast Growth of Graphene Patterns by Laser Direct Writing
Abstract
Rapid single-step fabrication of graphene patterns was developed using laser-induced chemical vapor deposition (LCVD). A laser beam irradiates a thin nickel foil in a CH4 and H2 environment to induce a local temperature rise, thereby allowing the direct writing of graphene patterns in precisely controlled positions at room temperature. Line patterns can be achieved with a single scan without pre- or postprocesses. Surprisingly, the growth rate is several thousand times faster than that of general CVD methods. The discovery and development of the LCVD growth process provide a route for the rapid fabrication of graphene patterns for various applications.
Recommended Citation
J. Park and W. Xiong and Y. Gao and M. Qian and Z. Xie and M. Mitchell and Y. Zhou and G. H. Han and L. Jiang and Y. Lu, "Fast Growth of Graphene Patterns by Laser Direct Writing," Applied Physics Letters, American Institute of Physics (AIP), Jan 2011.
The definitive version is available at https://doi.org/10.1063/1.3569720
Department(s)
Mechanical and Aerospace Engineering
Keywords and Phrases
Chemical Vapour Deposition; Graphene; Laser Deposition; Nanopatterning; Pulsed Laser Deposition; Radiation Effects
International Standard Serial Number (ISSN)
0003-6951
Document Type
Article - Journal
Document Version
Citation
File Type
text
Language(s)
English
Rights
© 2011 American Institute of Physics (AIP), All rights reserved.
Publication Date
01 Jan 2011
