Analysis of One-Dimensional and Two-Dimensional Thin Film "Pull-In" Phenomena under the Influence of an Electrostatic Potential

Author

Gang Duan
Kai-tak Wan, Missouri University of Science and Technology

Abstract

A thin one-dimensional rectangular or two-dimensional axisymmetric film is clamped at the perimeter. an electrostatic potential (V*₀) applied to a pad directly underneath the film leads to a "pull-in" phenomenon. the electromagnetic energy stored in the capacitive film-pad dielectric gap is decoupled from the mechanical deformation of the film using the Dugdale-Barenblatt-Maugis cohesive zone approximation. the ratio of film-pad gap (g) to film thickness (h), or γ=g/h, is found to play a crucial role in the electromechanical behavior of the film. Solution spanning a wide range of y is found such that V*₀ ∝ γ^_3/2 for γ < 0.5 and V*₀ ∝ γ^5/2 for γ > 5. the new model leads to new design criteria for MEMS-RF-switches. Copyright © 2007 by ASME.

Recommended Citation

G. Duan and K. Wan, "Analysis of One-Dimensional and Two-Dimensional Thin Film "Pull-In" Phenomena under the Influence of an Electrostatic Potential," Journal of Applied Mechanics, Transactions ASME, vol. 74, no. 5, pp. 927 - 934, American Society of Mechanical Engineers, Sep 2007.

The definitive version is available at https://doi.org/10.1115/1.2722311

Department(s)

Mechanical and Aerospace Engineering

Publication Status

Available Access

Keywords and Phrases

Electrostatic potential; MEMS; Pull-in phenomena; RF-switch; Surface forces

International Standard Serial Number (ISSN)

0021-8936

Document Type

Article - Journal

Document Version

Citation

File Type

text

Language(s)

English

Rights

© 2024 American Society of Mechanical Engineers, All rights reserved.

Publication Date

01 Sep 2007