Abstract
Monolayer tungsten disulfide (1L-WS2) is a direct bandgap atomic-layered semiconductor material with strain tunable optical and optoelectronic properties among the monolayer transition metal dichalcogenides (1L-TMDs). Here, we demonstrate biaxial strain tuned up conversion photoluminescence (UPL) from exfoliated 1L-WS2 flakes transferred on a flexible polycarbonate cruciform substrate. When the biaxial strain applied to 1L-WS2 increases from 0 to 0.51%, it is observed that the UPL peak position is redshifted by up to 60 nm% strain, while the UPL intensity exhibits exponential growth with the up-conversion energy difference varying from − 303 to − 120 meV. The measured power dependence of UPL from 1L-WS2 under biaxial strain reveals the one photon involved multiphonon-mediated up conversion mechanism. The demonstrated results provide new opportunities in advancing TMD-based optical up conversion devices for future flexible photonics and optoelectronics.
Recommended Citation
S. Roy et al., "Biaxial Strain Tuned Upconversion Photoluminescence Of Monolayer WS2," Scientific Reports, vol. 14, no. 1, article no. 3860, Nature Research, Dec 2024.
The definitive version is available at https://doi.org/10.1038/s41598-024-54185-8
Department(s)
Mechanical and Aerospace Engineering
Publication Status
Open Access
Keywords and Phrases
Biaxial strain; Monolayer WS 2; Upconversion photoluminescence
International Standard Serial Number (ISSN)
2045-2322
Document Type
Article - Journal
Document Version
Final Version
File Type
text
Language(s)
English
Rights
© 2024 The Authors, All rights reserved.
Creative Commons Licensing
This work is licensed under a Creative Commons Attribution 4.0 License.
Publication Date
01 Dec 2024
PubMed ID
38360891
Comments
Defense Advanced Research Projects Agency, Grant W911NF2110353