Abstract
Non-Equilibrium Molecular Dynamics Simulations Are Used to Determine Interfacial Thermal Resistance (Kapitza Resistance) between a Crystal and its Melt for Three Materials Including Ar, H2O, and C8H 18 (Octane). the Simulation Results Show that the Kapitza Resistance at a Crystal-Melt Interface is Very Small and Thus Has a Negligible Effect on Thermal Transport Across the Crystal-Melt Interface. the Underlying Origins of This Behavior Are the Very Good Vibrational Property Match between the Two Materials Forming the Interface and Good Interfacial Bonding. the Result Also Indicates that the Commonly-Used Assumption that Temperature Profile is Continuous at the Crystal-Melt Interface is Valid Even in the Case of Very Rapid Crystal Melting or Growth. © 2014 AIP Publishing LLC.
Recommended Citation
Z. Liang et al., "Thermal Resistance at an Interface between a Crystal and its Melt," Journal of Chemical Physics, vol. 141, no. 1, article no. 14706, American Institute of Physics, Jul 2014.
The definitive version is available at https://doi.org/10.1063/1.4885849
Department(s)
Mechanical and Aerospace Engineering
International Standard Serial Number (ISSN)
0021-9606
Document Type
Article - Journal
Document Version
Final Version
File Type
text
Language(s)
English
Rights
© 2023 American Institute of Physics, All rights reserved.
Publication Date
07 Jul 2014
