Effect of Thin Film Confined Between Two Dissimilar Solids on Interfacial Thermal Resistance
Abstract
A non-equilibrium molecular dynamics model is developed to investigate how a thin film confined between two dissimilar solids affects the thermal transport across the material interface. For two highly dissimilar (phonon frequency mismatched) solids, it is found that the insertion of a thin film between them can greatly enhance thermal transport across the material interface by a factor of 2.3 if the thin film has one of the following characteristics: (1)a multi-atom-thick thin film of which the phonon density of states (DOS) bridges the two different phonon DOSs for the solid on each side of the thin film; (2)a single-atom-thick film which is weakly bonded to the solid on both sides of the thin film. The enhanced thermal transport in the single-atom-thick film case is found mainly due to the increased inelastic scattering of phonons by the atoms in the film. However, for solid-solid interfaces with a relatively small difference in the phonon DOS, it is found that the insertion of a thin film may decrease the thermal transport. © 2011 IOP Publishing Ltd.
Recommended Citation
Z. Liang and H. Tsai, "Effect of Thin Film Confined Between Two Dissimilar Solids on Interfacial Thermal Resistance," Journal of Physics Condensed Matter, Institute of Physics - IOP Publishing, Jan 2011.
The definitive version is available at https://doi.org/10.1088/0953-8984/23/49/495303
Department(s)
Mechanical and Aerospace Engineering
Document Type
Article - Journal
Document Version
Citation
File Type
text
Language(s)
English
Rights
© 2011 Institute of Physics - IOP Publishing, All rights reserved.
Publication Date
01 Jan 2011