Structural, Optical and Electronic Properties of P Doped P-Type ZnO Thin Film

Abstract

P doped ZnO films were grown on quartz by radio frequency-magnetron sputtering method using a ZnO target mixed with 1.5 at% P2O 5 in the atmosphere of Ar and O2 mixing gas. The as-grown P doped ZnO film showed n-type conductivity, which was converted to p-type after 800 °C annealing in Ar gas. The P doped ZnO has a resistivity of 20.5 ? cm (p?2.0×1017 cm-3) and a Hall mobility of 2.1 cm2 V-1 s-1. XRD measurement indicated that both the as-grown and the annealed P doped ZnO films had a preferred (0 0 2) orientation. XPS study agreed with the model that the PZn2V Zn acceptor complex was responsible for the p-type conductivity as found in the annealed P-doped ZnO. Temperature-dependent photoluminescence (PL) spectrum showed that the dominant band is located at 3.312 eV, which was attributed to the free electronic radiative transition to neutral acceptor level (FA) in ZnO. The PZn2VZn acceptor complex level was estimated to be at EV=122 meV. © 2011 Elsevier B.V. All rights reserved.

Department(s)

Mechanical and Aerospace Engineering

Keywords and Phrases

P Doped; Photoluminescence; ZnO

International Standard Serial Number (ISSN)

0921-4526

Document Type

Article - Journal

Document Version

Citation

File Type

text

Language(s)

English

Rights

© 2011 Elsevier, All rights reserved.

Publication Date

01 Jan 2011

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