Photoreflectance Spectroscopy of Strained (In)GaAsN/GaAs Multiple Quantum Wells

Author

J. B. Heroux
Xiaodong Yang, Missouri University of Science and TechnologyFollow
W. I. Wang

Abstract

The effect of a variation of the indium and nitrogen concentrations in Inᵪ Ga_1-x As_1-y N_y /GaAs multiquantum wells grown by molecular beam epitaxy is studied systematically by room temperature photoreflectance spectroscopy. The band gap redshift caused by a nitrogen fraction of 1.5% decreases by as much as 30% as the indium fraction increases from 0% to 20%. A moderate increase of electron effective mass (Δmₑ ~ 0.03m₀) is found in all samples containing nitrogen (y ≳ 1%). In compressively strained quantum wells, the energy separation between the first confined heavy and light hole energy levels decreases in a regular manner as the nitrogen fraction increases from 0% to 1.7%, suggesting that the modification of the valence bands due to nitrogen incorporation can be explained by the strain variation.

Recommended Citation

J. B. Heroux et al., "Photoreflectance Spectroscopy of Strained (In)GaAsN/GaAs Multiple Quantum Wells," Journal of Applied Physics, vol. 92, no. 8, pp. 4361 - 4366, American Institute of Physics (AIP), Oct 2002.

The definitive version is available at https://doi.org/10.1063/1.1507817

Department(s)

Mechanical and Aerospace Engineering

International Standard Serial Number (ISSN)

0021-8979

Document Type

Article - Journal

Document Version

Final Version

File Type

text

Language(s)

English

Rights

© 2002 American Institute of Physics (AIP), All rights reserved.

Publication Date

15 Oct 2002