Optical Characterization of Strained InGaAsN/GaAs Multiple Quantum Wells
The optical transitions in InGaAsN/GaAs quantum wells were studied. It was observed by low-temperature transmittance and room-temperature photoreflectance spectroscopy that the unstrained valence band alignment was independent of nitrogen fraction. Nitrogen incorporation caused the increase in effective mass and conductance band offset. Lowered compressive strain in the wells caused the variation of the valence band alignment. Results were described by the formalism of the band anticrossing model.
J. B. Heroux et al., "Optical Characterization of Strained InGaAsN/GaAs Multiple Quantum Wells," Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, American Institute of Physics (AIP), Jan 2002.
The definitive version is available at https://doi.org/10.1116/1.1481752
20th North American Conference on Molecular Beam Epitaxy
Mechanical and Aerospace Engineering
Article - Conference proceedings
© 2002 American Institute of Physics (AIP), All rights reserved.
01 Jan 2002