InGaAsNSb: A Novel Material for Long-Wavelength Semiconductor Lasers

Author

Xiaodong Yang, Missouri University of Science and TechnologyFollow
J. B. Heroux
W. I. Wang

Abstract

Quantum wells grown by slid source molecular beam epitaxy using a nitrogen radiofrequency plasma source for long wavelength semiconductor lasers was experimentally demonstrated. Antimony suppressed the three dimensional growth and improved the interface of the quantum well acting as a surfactant. The effect of excess antimony flux on the optial properties of the quantum well was investigated by photoluminescence. Feasibility of the quantum well for 1.55 ?m laser was demonstrated by 1.53 ?m photoluminescence at room temperature.

Recommended Citation

X. Yang et al., "InGaAsNSb: A Novel Material for Long-Wavelength Semiconductor Lasers," Conference on Lasers and Electro-Optics Europe - Technical Digest, Institute of Electrical and Electronics Engineers (IEEE), Jan 2001.

The definitive version is available at https://doi.org/10.1109/CLEO.2001.947715

Meeting Name

Conference on Lasers and Electro-Optics (CLEO)

Department(s)

Mechanical and Aerospace Engineering

Sponsor(s)

Optical Society of America
IEEE/ LEOS Lasers and Electro Optics Society
American Physical Society

Document Type

Article - Conference proceedings

Document Version

Citation

File Type

text

Language(s)

English

Rights

© 2001 Institute of Electrical and Electronics Engineers (IEEE), All rights reserved.

Publication Date

01 Jan 2001