Fabrication of ZnO Nanowall-Network Ultraviolet Photodetector on Si Substrates
Abstract
ZnO nanowall networks were prepared by plasma-assisted molecular beam epitaxy without a catalyst on Si (111) substrates. The nanostructures have preferred orientation along the c axis. The nanostructures are about 10 to 20 nm thick and about 50 nm tall. The planar geometry photoconductive type metal-semiconductor-metal photodetector based on the ZnO nanowall networks exhibits a high and wide response spectrum, and no decrease from 250 to 360 nm. with the applied bias below 5 V, the dark current was below 6 ?A, and the peak responsivity of 15 A/W was achieved at 360 nm. The UV (360 nm) to visible (450 nm) rejection ratio of around two orders could be extracted from the spectra response. © 2011 Chinese Institute of Electronics.
Recommended Citation
S. Su et al., "Fabrication of ZnO Nanowall-Network Ultraviolet Photodetector on Si Substrates," Journal of Semiconductors, Institute of Physics - IOP Publishing, Jan 2011.
The definitive version is available at https://doi.org/10.1088/1674-4926/32/7/074008
Department(s)
Mechanical and Aerospace Engineering
Keywords and Phrases
Detector; MBE; ZnO
International Standard Serial Number (ISSN)
1674-4926
Document Type
Article - Journal
Document Version
Citation
File Type
text
Language(s)
English
Rights
© 2011 Institute of Physics - IOP Publishing, All rights reserved.
Publication Date
01 Jan 2011
