The Influence of Extremely Low Oxygen Partial Pressures on the Sessile Drop Contact Angles and the Interfacial Energies and Reactions of Molten Silicon on Silicon Carbide, Silicon Nitride, and Aluminum Nitride

Author

P. D. Ownby, Missouri University of Science and TechnologyFollow
M. W. Barsoum
B. F. Yu
Harold V. Romero

Recommended Citation

P. D. Ownby et al., "The Influence of Extremely Low Oxygen Partial Pressures on the Sessile Drop Contact Angles and the Interfacial Energies and Reactions of Molten Silicon on Silicon Carbide, Silicon Nitride, and Aluminum Nitride," 13th Low-Cost Solar Array Project Integration Meeting, California Institute of Technology, JPL Publication, 79-88 (1979), Jet Propulsion Laboratory, Jan 1979.

Department(s)

Materials Science and Engineering

Document Type

Article - Conference proceedings

Document Version

Citation

File Type

text

Language(s)

English

Rights

© 1979 Jet Propulsion Laboratory, All rights reserved.

Publication Date

01 Jan 1979