Abstract
This study investigated the non-metallic inclusions in Solar 2rade Silicon (SoG-Si), especially the distribution of inclusions in the top 15mm layer of multicrystalline silicon ingot. the SoG-Si ingot produced from directional solidification process usually pushes the impurities to the top and finally cut off and discarded, which leads to material loss. the hard inclusions lead to wire breakages during the cutting of the ingot into wafers. the main kinds of inclusions found in top-cut silicon scraps from two manufacturers have been investigated using acid extraction, automated feature analysis techniques and SEM-EDS and optical Microscope: They are needle-like Si3N4 and lumpy SiC inclusions. Surface observations of the scraps before polishing revealed that, Si3N4 inclusions are usually bigger and, in some cases, can be about a few millimeters. SiC inclusions are usually smaller, ∼200μm but can be ∼500μm in some cases. F or the directional solidified silicon ingot, it was determined that an approximate distance of ∼10mm is a good enough cutoff thickness. © 2010 IEEE.
Recommended Citation
L. N. Damoah et al., "Non-Metallic Particles in Solar Grade Silicon (SoG-Si)," Conference Record of the IEEE Photovoltaic Specialists Conference, pp. 2270 - 2274, article no. 5617125, Institute of Electrical and Electronics Engineers, Dec 2010.
The definitive version is available at https://doi.org/10.1109/PVSC.2010.5617125
Department(s)
Materials Science and Engineering
International Standard Book Number (ISBN)
978-142445891-2
International Standard Serial Number (ISSN)
0160-8371
Document Type
Article - Conference proceedings
Document Version
Citation
File Type
text
Language(s)
English
Rights
© 2024 Institute of Electrical and Electronics Engineers, All rights reserved.
Publication Date
20 Dec 2010
