Abstract
We show there are putative pitfalls when one predicts the magnetoresistance of magnetic tunnel junctions (JMR) based on different toy models. Amongst them are the sensitivity of the MR to the details of the profile of the potential barrier between the metallic electrodes and the insulating barrier, and the common assumption of only one band of electrons. We indicate the ingredients that are necessary to obtain a more complete description of the JMR of magnetic tunnel junctions.
Recommended Citation
S. C. Zhang and P. M. Levy, "Models for Magnetoresistance in Tunnel Junctions," European Physical Journal B, vol. 10, no. 4, pp. 599 - 606, SpringerOpen; Società Italiana di Fisica; EDP Sciences, Aug 1999.
The definitive version is available at https://doi.org/10.1007/s100510050892
Department(s)
Materials Science and Engineering
Keywords and Phrases
73.40.Gk Tunneling; 73.50.Jt galvanomagnetic and other magnetotransport effects (including thermomagnetic effects); 75.70.Cn Interfacial magnetic properties (multilayers, magnetic quantum wells, superlattices, magnetic heterostructures)
International Standard Serial Number (ISSN)
1434-6028
Document Type
Article - Journal
Document Version
Final Version
File Type
text
Language(s)
English
Rights
© 2024 The Authors, All rights reserved.
Creative Commons Licensing
This work is licensed under a Creative Commons Attribution 4.0 License.
Publication Date
02 Aug 1999
