Abstract
Spontaneous deposition of copper seed layers from metal bearing organic based solutions onto sputter deposited titanium, titanium nitride, and tantalum diffusion barrier thin films has been demonstrated. Based on electrochemically driven cementation exchange reactions, the process was used to produce adherent, selectively deposited copper metal particulate films on blanket and patterned barrier metal thin films on silicon substrates. The organic solution deposited copper films were capable of acting as seed layers for subsequent electrolytic and electroless copper deposition processes using standard plating baths. Electroless and electrolytic copper films from 0.1μm to 1.0μm thick were produced on a variety of samples on which the organic solution copper acted as the initial catalytic seed layer. The feasibility of using organic solution deposited palladium as a seed layer followed by electroless copper deposition has also been demonstrated. In addition, experiments conducted on patterned barrier metal samples with exposed areas of dielectric such as polyimide indicated that no organic solution copper or palladium deposition occurred on the insulating materials.
Recommended Citation
H. Gu et al., "Organic Solution Deposition of Copper Seed Layers Onto Barrier Metals," Materials Research Society Symposium-Proceedings, vol. 612, pp. D9191 - D9196, Springer, Jan 2000.
The definitive version is available at https://doi.org/10.1557/proc-612-d9.19.1
Department(s)
Materials Science and Engineering
International Standard Serial Number (ISSN)
0272-9172
Document Type
Article - Journal
Document Version
Citation
File Type
text
Language(s)
English
Rights
© 2024 Springer, All rights reserved.
Publication Date
01 Jan 2000
Comments
Air Force Research Laboratory, Grant F33615-97-C-1074