Abstract

Dense, homogeneous and crack-free thin films (0.2-2 microm in thickness) of (ZrO2)0.84(YO1.5)0.16 (YSZ) were deposited on porous or dense substrates, at temperatures not exceeding 600°C, using a solution-deposition technique. The structural evolution and microstructure of the deposited films were investigated using X-ray diffraction (XRD) and scanning electron microscopy (SEM). Raman spectroscopy revealed the presence of fine-grain cubic YSZ at annealing temperatures as low as 600°C. Grain growth occurred at higher temperatures as detected by atomic force microscopy (AFM). ac impedance spectroscopy was used to study the electrical characteristics of the YSZ films as a function of temperature. The ionic conductivity and activation energy of the deposited film are similar to YSZ bulk material, but no grain-boundary effect was observed in the film. The deposited films may be considered for electrolyte application in intermediate temperature solid oxide fuel cells (SOFCs). © 1994.

Department(s)

Materials Science and Engineering

Comments

Asia Research Institute, Grant GRI-5090-260-2069

International Standard Serial Number (ISSN)

0167-2738

Document Type

Article - Journal

Document Version

Citation

File Type

text

Language(s)

English

Rights

© 2024 Elsevier, All rights reserved.

Publication Date

01 Jan 1994

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