Abstract
Dense, homogeneous and crack-free thin films (0.2-2 microm in thickness) of (ZrO2)0.84(YO1.5)0.16 (YSZ) were deposited on porous or dense substrates, at temperatures not exceeding 600°C, using a solution-deposition technique. The structural evolution and microstructure of the deposited films were investigated using X-ray diffraction (XRD) and scanning electron microscopy (SEM). Raman spectroscopy revealed the presence of fine-grain cubic YSZ at annealing temperatures as low as 600°C. Grain growth occurred at higher temperatures as detected by atomic force microscopy (AFM). ac impedance spectroscopy was used to study the electrical characteristics of the YSZ films as a function of temperature. The ionic conductivity and activation energy of the deposited film are similar to YSZ bulk material, but no grain-boundary effect was observed in the film. The deposited films may be considered for electrolyte application in intermediate temperature solid oxide fuel cells (SOFCs). © 1994.
Recommended Citation
C. C. Chen et al., "Synthesis and Characterization of YSZ Thin Film Electrolytes," Solid State Ionics, vol. 70 thru 71, no. PART 1, pp. 101 - 108, Elsevier, Jan 1994.
The definitive version is available at https://doi.org/10.1016/0167-2738(94)90293-3
Department(s)
Materials Science and Engineering
International Standard Serial Number (ISSN)
0167-2738
Document Type
Article - Journal
Document Version
Citation
File Type
text
Language(s)
English
Rights
© 2024 Elsevier, All rights reserved.
Publication Date
01 Jan 1994
Comments
Asia Research Institute, Grant GRI-5090-260-2069