Abstract

BaxSr1-xTiO3 (BST), PbZrxTi1-xO3 (PZT) and two-layer PZT-BST films were prepared on Pt, Si(100) and Si(111) substrates by a sol-gel method. XRD analysis shows that the PZT films on the Si(111) substrates tended to be preferentially oriented in the (110) direction. The nondestructive readout of the state of ferroelectric polarization was investigated by three methods: the pyroelectric effect, the non-linearity of the capacitance and the field effect in MOS structures. It is shown that all three methods provide nondestructive readout, and the choice between them depends on the intended use.

Department(s)

Materials Science and Engineering

International Standard Serial Number (ISSN)

0272-9172

Document Type

Article - Conference proceedings

Document Version

Citation

File Type

text

Language(s)

English

Rights

© 2024 Springer, All rights reserved.

Publication Date

01 Jan 1997

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