Abstract
We find that electron propagation across a uniform nonmagnetic metallic layer di in a magnetically layered structure is coherent up to a critical length dc. This provides a possible explanation for the slow decay of the magnetoresistance of magnetic tunnel junctions when a layer of Cu or Ag is inserted between the magnetic electrode and the barrier. However, for many (most) structures the roughness of the interfaces breaks the coherence for di ≪ dc. While the loss of coherence is not fatal for the magnetoresistance of metallic multilayers, it is for tunnel junctions. The quantum well states arising from the insertion of a nonmagnetic layer in a magnetic tunnel junction do not promote magnetoresistance. © 1998 The American Physical Society.
Recommended Citation
S. C. Zhang and P. M. Levy, "Magnetoresistance of Magnetic Tunnel Junctions in the Presence of a Nonmagnetic Layer," Physical Review Letters, vol. 81, no. 25, pp. 5660 - 5663, American Physical Society, Jan 1998.
The definitive version is available at https://doi.org/10.1103/PhysRevLett.81.5660
Department(s)
Materials Science and Engineering
International Standard Serial Number (ISSN)
1079-7114; 0031-9007
Document Type
Article - Journal
Document Version
Citation
File Type
text
Language(s)
English
Rights
© 2024 American Physical Society, All rights reserved.
Publication Date
01 Jan 1998
