Abstract
Lattice parameters, thermal expansion coefficients and Grüneisen parameters of silicon are determined by an X-Ray diffraction method in the temperature range of 180-40 K without the use of liquid gases. Thermal expansion of silicon becomes negative below 120 K which is discussed in terms of its lattice vibrations and crystal structure. © 1972.
Recommended Citation
J. S. Shah and M. E. Straumanis, "Thermal Expansion Behavior Of Silicon At Low Temperatures," Solid State Communications, vol. 10, no. 1, pp. 159 - 162, Elsevier, Jan 1972.
The definitive version is available at https://doi.org/10.1016/0038-1098(72)90371-7
Department(s)
Materials Science and Engineering
International Standard Serial Number (ISSN)
0038-1098
Document Type
Article - Journal
Document Version
Citation
File Type
text
Language(s)
English
Rights
© 2023 Elsevier, All rights reserved.
Publication Date
01 Jan 1972
