The rest (or corrosion) and dissolution potentials of InSb single crystals in HC1 were determined. There is no potential difference (within error limits) between the inverse {111} faces in pure HC1. A difference of up to 44 mV and more develops as soon as the InSb electrode is anodically dissolved. The potential becomes less noble in the sequence In{111}, {100}, {110}, Sb{111}. The Tafel relationship is observed over three decades of current density. With additions of FeCl3, FeCl2, K3Fe(CN)6, K4Fe(CN)6, H2C4H4O6 to 2N HC1, the anodic potentials of both inverse {111} faces are shifted to more active values; the e'H of In{111} is always nobler than that of Sb{111}. There are indications that the various potentials observed are a function of current density within the pores of a protective layer, Sb^OsCU. The apparent activation energy, ca. 20 kcal/mole, of the anodic dissolution reaction is nearly the same on all crystallography planes of InSb. The rate of anodic dissolution of Sb{111} in pure 2N HC1 is 3-7 times larger than that of the inverse face at the same potential. © 1972, by The Electrochemical Society, Inc. All rights reserved.


Materials Science and Engineering

Keywords and Phrases

activation energies; dissolution potentials; InSb; Tafel lines

International Standard Serial Number (ISSN)

1945-7111; 0013-4651

Document Type

Article - Journal

Document Version


File Type





© 2023 The Electrochemical Society, All rights reserved.

Publication Date

01 Jan 1972

Included in

Metallurgy Commons