Abstract
The rest (or corrosion) and dissolution potentials of InSb single crystals in HC1 were determined. There is no potential difference (within error limits) between the inverse {111} faces in pure HC1. A difference of up to 44 mV and more develops as soon as the InSb electrode is anodically dissolved. The potential becomes less noble in the sequence In{111}, {100}, {110}, Sb{111}. The Tafel relationship is observed over three decades of current density. With additions of FeCl3, FeCl2, K3Fe(CN)6, K4Fe(CN)6, H2C4H4O6 to 2N HC1, the anodic potentials of both inverse {111} faces are shifted to more active values; the e'H of In{111} is always nobler than that of Sb{111}. There are indications that the various potentials observed are a function of current density within the pores of a protective layer, Sb^OsCU. The apparent activation energy, ca. 20 kcal/mole, of the anodic dissolution reaction is nearly the same on all crystallography planes of InSb. The rate of anodic dissolution of Sb{111} in pure 2N HC1 is 3-7 times larger than that of the inverse face at the same potential. © 1972, by The Electrochemical Society, Inc. All rights reserved.
Recommended Citation
M. E. Straumanis and L. d. Hu, "Dissolution Potentials And Activation Energies Of InSb Single Crystals," Journal of the Electrochemical Society, vol. 119, no. 7, pp. 818 - 822, The Electrochemical Society, Jan 1972.
The definitive version is available at https://doi.org/10.1149/1.2404347
Department(s)
Materials Science and Engineering
Keywords and Phrases
activation energies; dissolution potentials; InSb; Tafel lines
International Standard Serial Number (ISSN)
1945-7111; 0013-4651
Document Type
Article - Journal
Document Version
Citation
File Type
text
Language(s)
English
Rights
© 2023 The Electrochemical Society, All rights reserved.
Publication Date
01 Jan 1972
