Abstract

The oxidation kinetics of a single crystal of SrTiOs were measured with a tensivolumetric system over the temperature range 700 -975 at 0.03 atm oxygen pressure. The oxidation was found to be oxygen diffusion limited with an activation energy of 14.9 - 1.3 kcal/mole. Combining the kinetic data with relative defect concentration data yielded an activation energy for oxygen self-diffusion of 57 - 16 kcal/mole. The enthalpy of formation of doubly ionized oxygen vacancies was calculated to be 126 - 13 kcal/mol. © 1975, The Electrochemical Society, Inc. All rights reserved.

Department(s)

Materials Science and Engineering

Keywords and Phrases

oxidation; oxygen self-diffusion; oxygen vacancy concentration

International Standard Serial Number (ISSN)

1945-7111; 0013-4651

Document Type

Article - Journal

Document Version

Citation

File Type

text

Language(s)

English

Rights

© 2023 The Electrochemical Society, All rights reserved.

Publication Date

01 Jan 1975

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