Abstract
The etching behavior of the inverse {111} planes of undoped, semiconducting, n-type, InSb single crystals was explored. Depending upon the etchant, including anodic dissolution, various etch patterns were obtained on the inverse planes. In general, the etch pits on the In{111} plane were round, and the face was shiny, whereas the face of the inverse plane was dark and rough. The rates of dissolution in the electrolytes used were very low, especially in absence of oxidizers. The components dissolve as In3+ and Sb3 +. At current densities above 40 or 60 mA cm-2 (on Sb{111} or In{111}), growth of a black, colloidal film of Sb4O5Cl2 containing very fine metallic Sb particles occurs on both planes. The Sb particles result from the partial disintegration of InSb. Upon heating the film in vacuum, recrystallization occurs and the Sb aggregates to form larger particles. An explanation is offered for the different behaviors of the inverse {111} planes. © 1971, by The Electrochemical Society, Inc. All rights reserved.
Recommended Citation
M. E. Straumanis and L. D. Hu, "The Anodic Dissolution Reaction Of InSb: Etch Patterns, Electron Number, Anodic Disintegration, And Film Formation," Journal of the Electrochemical Society, vol. 118, no. 3, pp. 433 - 436, The Electrochemical Society, Jan 1971.
The definitive version is available at https://doi.org/10.1149/1.2408075
Department(s)
Materials Science and Engineering
Keywords and Phrases
colloidal Sb; FeCl3 etchant; inverse {111} planes; Sb4O5Cl2; self-dissolution rates
International Standard Serial Number (ISSN)
1945-7111; 0013-4651
Document Type
Article - Journal
Document Version
Citation
File Type
text
Language(s)
English
Rights
© 2023 The Electrochemical Society, All rights reserved.
Publication Date
01 Jan 1971
